%0 journal article
%@ 0013-4651
%A Schwenke, H., Knoth, J., Fabry, L., Pahlke, S., Scholz, R., Frey, L.

%D 1997
%J Journal of the Electrochemical Society
%N 11
%P 3979-3983 

%T Measurement of shallow arsenic impurity profiles in semiconductor silicon using time-of-flight secondary ion mass spectrometry and total reflection X-ray fluorescence spectrometry
%U 
11 
%X