@misc{kreuzpaintner_epitaxial_growth_2008, 
author={Kreuzpaintner, W., Stoermer, M., Lott, D., Solina, D., Schreyer, A.},
title={Epitaxial Growth of nickel on Si(100) by DC Magnetron Sputtering},
year={2008},
howpublished = {journal article},
doi = {https://doi.org/10.1063/1.3032383},
abstract = {The influence of the substrate temperature on the growth of highly textured Ni(111) and epitaxial Ni(200) with the relationships Ni[100]||Si[110] and Ni(001)||Si(001) on hydrogen terminated Si(100) wafer substrates by means of direct current magnetron sputtering is reported. In order to minimize crystal defect formation and to achieve a high quality epitaxial growth of Ni on Si, a two step deposition process was developed whereby different deposition conditions were used for an initial nickel seed layer and the remaining nickel film. The in-plane and out-of-plane structural properties of the films were investigated using x-ray scattering techniques, whereas magneto-optical Kerr effect and neutron reflectometry were used to confirm the magnetic nature of the epitaxially deposited nickel films.},
note = {Online available at: \url{https://doi.org/10.1063/1.3032383} (DOI). Kreuzpaintner, W.; Stoermer, M.; Lott, D.; Solina, D.; Schreyer, A.: Epitaxial Growth of nickel on Si(100) by DC Magnetron Sputtering. Journal of Applied Physics. 2008. vol. 104, no. 11, 114302. DOI: 10.1063/1.3032383}}