Topotaxial growht of Ti2AlN by solid state reaction in AlN/Ti(0001) multilayer thin films

Hoeglund, C.; Beckers, M.; Schell, N.; Borany, J.v.; Birch, J.; Hultmann, L.

Journalpaper

Topotaxial growht of Ti2AlN by solid state reaction in AlN/Ti(0001) multilayer thin films

Abstract

The formation of Ti2AlN by solid state reaction between layers of wurtzite-AlN and -Ti was characterized by in situ x-ray scattering. The sequential deposition of these layers by dual magnetron sputtering onto Al2O3(0001) at 200 °C yielded smooth, heteroepitaxial (0001) oriented films, with abrupt AlN/Ti interfaces as shown by x-ray reflectivity and Rutherford backscattering spectroscopy. Annealing at 400 °C led to AlN decomposition and diffusion of released Al and N into the Ti layers, with formation of Ti3AlN. Further annealing at 500 °C resulted in a phase transformation into Ti2AlN(0001) after only 5 min.

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URL: https://publications.hereon.de/id/26018/
Authors:Hoeglund, C., Beckers, M., Schell, N., Borany, J.v., Birch, J., Hultmann, L.
Year:2007
In: Applied Physics Letters
Volume:90
Issue:17
Pages:174106
Publisher:AIP, Melville, NY
Type:Journalpaper
ISSN: 0003-6951
Cite as: Hoeglund, C.; Beckers, M.; Schell, N.; Borany, J.v.; Birch, J.; Hultmann, L.: Topotaxial growht of Ti2AlN by solid state reaction in AlN/Ti(0001) multilayer thin films. In: Applied Physics Letters. Vol. 90 (2007) 17, 174106. (DOI: 10.1063/1.2731520)